Blank Cover Image

Studies on Floating Contact Press-Pack Diodes Surge Current Capability

Author(s):
Publication title:
Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Title of ser.:
Materials science forum
Ser. no.:
858
Pub. Year:
2016
Page(from):
1053
Page(to):
1056
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710427 [3035710422]
Language:
English
Call no.:
M23650 [v.858]
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts

V. Banu, P. Godignon, X. Jordá, X. Perpinya, J. Millán

Trans Tech Publications
7 Conference Proceedings Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications

Tournier, D., Vellvehi, M., Godignon, P., Jorda, X., Millan, J.

Trans Tech Publications
2 Conference Proceedings Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits

V. Banu, J. Montserrat, M. Alexandru, X. Jordá, J. Millán

Trans Tech Publications
8 Conference Proceedings A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability

Dahlquist, F., Lendenmann, H., Ostling, M.

Trans Tech Publications
3 Conference Proceedings Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

V. Banu, P. Godignon, X. Jordá, M. Alexandru, J. Millán

Trans Tech Publications
9 Conference Proceedings A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability

Dahlquist, F., Lendenmann, H., OEstling, M.

Trans Tech Publications
4 Conference Proceedings Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material

V. Banu, P. Brosselard, X. Jordá, P. Godignon, J. Millán

Trans Tech Publications
10 Conference Proceedings Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations

J. Hilsenbeck, M. Treu, R. Rupp, K. Rüschenschmidt, R. Kern

Trans Tech Publications
5 Conference Proceedings Integration of Temperature and Current Sensors in 4H-SiC VDMOS

M. Berthou, P. Godignon, P. Brosselard, D. Tournier, J. Millán

Trans Tech Publications
11 Conference Proceedings 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage

Brezeanu, G., Badila, M., Millan, J., Godignon, P., Locatelli, M. L., Chante, J. P., Lebedev, A., Banu, V.

Trans Tech Publications
6 Conference Proceedings Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers

Jorda, X., Tournier, D., Rebollo, J., Millan, J., Godignon, P.

Trans Tech Publications
12 Conference Proceedings High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

M. Alexandru, V. Banu, M. Florentin, X. Jordá, M. Vellvehi

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12