Blank Cover Image

4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates

Author(s):
Publication title:
Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Title of ser.:
Materials science forum
Ser. no.:
858
Pub. Year:
2016
Page(from):
954
Page(to):
957
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710427 [3035710422]
Language:
English
Call no.:
M23650 [v.858]
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Fabrication of Thick Free-Standing Lightly-Doped n-Type 4H-SiC Wafers

R. Dahal, S. Chowdhury, C.W. Hitchcock, T.P. Chow, I.B. Bhat

Trans Tech Publications
7 Conference Proceedings Studies on Selective Growth and In Situ Etchitlg of 4H-SiC Using a TaC Mask

Li, C.H., Bhat, I.B., Chow, T.P.

Trans Tech Publications
2 Conference Proceedings Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC

S. Chowdhury, K. Yamamoto, C. Hitchcock, T.P. Chow

Trans Tech Publications
8 Conference Proceedings Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures

S. Chowdhury, C.W. Hitchcock, T.P. Chow

Trans Tech Publications
3 Conference Proceedings Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

H. Naik, K. Tang, T. Marron, T.P. Chow, J.A. Fronheiser

Trans Tech Publications
9 Conference Proceedings Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier

Zhu, L., Chow, T.P.

Trans Tech Publications
4 Conference Proceedings Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration

Rao, S., Chow, T.P., Bhat, I.B.

Trans Tech Publications
10 Conference Proceedings Overlapping Shockley/Frank Faults in 4F-SiC PiN Diodes

Twigg, M.E., Stahlbush, R.E., Losee, P.A., Li, C.H., Bhat, I.B., Chow, T.P.

Trans Tech Publications
5 Conference Proceedings Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC

S. Chowdhury, K. Yamamoto, T.P. Chow

Trans Tech Publications
11 Conference Proceedings Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask

Li, C., Seiler, J., Bhat, I., Chow, T.P.

Trans Tech Publications
6 Conference Proceedings Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors

Wang, R., Bhat, I.B., Chow, T.P.

Trans Tech Publications
12 Conference Proceedings Electrical Characteristics of In Situ Grown Lateral P+N GaN Junction Diodes on Sapphire Substrates

Fedison,J.B., Chow,T.P., Lu,H., Bhat,I.B.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12