Optimization of 1700V 4H-SiC JBS Diode Parameters
- Author(s):
- Publication title:
- Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
- Title of ser.:
- Materials science forum
- Ser. no.:
- 858
- Pub. Year:
- 2016
- Page(from):
- 782
- Page(to):
- 785
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710427 [3035710422]
- Language:
- English
- Call no.:
- M23650 [v.858]
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics
Trans Tech Publications |
7
Conference Proceedings
Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
Trans Tech Publications |
3
Conference Proceedings
On the Influence of Active Area Design on the Performance of SiC JBS Diodes
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation
Trans Tech Publications |