Blank Cover Image

High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing

Author(s):
Publication title:
Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Title of ser.:
Materials science forum
Ser. no.:
858
Pub. Year:
2016
Page(from):
535
Page(to):
539
Pages:
5
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710427 [3035710422]
Language:
English
Call no.:
M23650 [v.858]
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Estimation of Phosphorus-Implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis

H. Hanafusa, K. Maruyama, S. Hayashi, S. Higashi

Trans Tech Publications
7 Conference Proceedings Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions

Ohshima, T., Uedono, A., Itoh, H., Yoshikawa, M., Kojima, K., Okada, S., Nashiyama, I., Abe, K., Tanigawa, S., Frank, …

Trans Tech Publications
2 Conference Proceedings Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

H. Hanafusa, A. Ohta, R. Ashihara, K. Maruyama, T. Mizuno

Trans Tech Publications
8 Conference Proceedings Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H.

Trans Tech Publications
3 Conference Proceedings Properties of a Non-thermal Radio Frequency Atmospheric Pressure Plasma Jet (APPJ)

K.-D. Weltmann, R. Foest, E. Kindel, H. Lange, M. Stieber

Society of Vacuum Coaters
9 Conference Proceedings Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K., Arai, K.

Trans Tech Publications
4 Conference Proceedings Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory

T. Okada, S. Higashi, H. Kaku, H. Furukawa, S. Miyazaki

Electrochemical Society
10 Conference Proceedings Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K., Arai, K.

Trans Tech Publications
5 Conference Proceedings Basic Experiment on Atmospheric-Pressure Plasma Etching with Slit Aperture for High-Efficiency Dicing of SiC Wafer

Y. Sano, H. Nishikawa, K. Aida, C. Tangpatjaroen, K. Yamamura

Trans Tech Publications
11 Conference Proceedings Activating Ion Implants in 4H-SiC by Annealing with An AIN or BN Cap*

Jones, K., Shah, P.B., Ervin, M.H., Deenge, M.A., Vispute, R.D., Freitas, L.A., Gerardi, G.J.

Electrochemical Society
6 Conference Proceedings Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process

Uekusa, S., Maruyama, H.

Trans Tech Publications
12 Conference Proceedings High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4+H2

T. Sakata, K. Makihara, H. Deki, S. Higashi, S. Miyazaki

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12