Blank Cover Image

Pragmatic Approach to the Characterization of SiC/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements

Author(s):
Publication title:
Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Title of ser.:
Materials science forum
Ser. no.:
858
Pub. Year:
2016
Page(from):
477
Page(to):
480
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710427 [3035710422]
Language:
English
Call no.:
M23650 [v.858]
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge

T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, T. Kimoto

Trans Tech Publications
7 Conference Proceedings Traps at the SiC/SiO2-Interface

Pensl, Gerhard, Bassler, Michael, Ciobanu, Florin, Afanas'ev, Valeri, Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, …

Materials Research Society
2 Conference Proceedings Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC

T. Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi, H. Okumura

Trans Tech Publications
8 Conference Proceedings Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices

Das, M. K., Um, B. S., Cooper, J. A. Jr.

Trans Tech Publications
3 Conference Proceedings Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface

D. Okamoto, H. Yano, S. Kotake, T. Hatayama, T. Fuyuki

Trans Tech Publications
9 Conference Proceedings Interface States of SiO2/SiC on (11-20) and (0001) Si Faces

Yano, H., Kimoto, T., Matsunami, H.

Trans Tech Publications
4 Conference Proceedings Microscopic Examination of SiO2/4H-SiC Interfaces

T. Hatakeyama, H. Matsuhata, T. Suzuki, T. Shinohe, H. Okumura

Trans Tech Publications
10 Conference Proceedings Characterization of SiO2/SiC Interfaces Annealed in N2O or POCl3

P. Fiorenza, L.K. Swanson, M. Vivona, F. Giannazzo, C. Bongiorno

Trans Tech Publications
5 Conference Proceedings Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices

S. Katakami, M. Arai, K. Takenaka, Y. Yonezawa, H. Ishimori

Trans Tech Publications
11 Conference Proceedings Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment

Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T.

Trans Tech Publications
6 Conference Proceedings Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface

T. Hosoi, T. Kirino, A. Chanthaphan, Y. Uenishi, D. Ikeguchi

Trans Tech Publications
12 Conference Proceedings Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment

Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12