The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method

The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method

Author(s):

Publication title:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

Title of ser.:

Materials science forum

Ser. no.:

858

Pub. Year:

2016

Page(from):

113

Page(to):

118

Pages:

6

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

Language:

English

Call no.:

M23650 [v.858]

Type:

Conference Proceedings

Details

TDL ID:	ZA00055306
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
Conf. info. (Number):	16th
Conf. info. (Venue):	Giardini Naxos, Italy
Conf. info. (Date):	2015.10.04-2015.10.09
Note for article:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

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