Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

Author(s):

Publication title:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Title of ser.:

Materials science forum

Ser. no.:

821-823

Pub. Year:

2015

Page(from):

656

Page(to):

659

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054285
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
Conf. info. (Number):	2014
Conf. info. (Venue):	Grenoble, France
Conf. info. (Date):	2014.09.21-2014.09.25
Note for article:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Similar Items:

1 Conference Proceedings Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET) A. Hürner, H. Mitlehner, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications	7 Conference Proceedings Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices A. Bolotnikov, P.A. Losee, P. Deeb, M.L. Wang, G. Dunne Trans Tech Publications
2 Conference Proceedings Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability A. Hürner, T. Erlbacher, H. Mitlehner, A.J. Bauer, L. Frey Trans Tech Publications	8 Conference Proceedings Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs C. Strenger, V. Häublein, T. Erlbacher, A.J. Bauer, H. Ryssel Trans Tech Publications
3 Conference Proceedings Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices L. di Benedetto, G.D. Licciardo, T. Erlbacher, A.J. Bauer, A. Rubino Trans Tech Publications	9 Conference Proceedings Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices M. Snook, T. McNutt, C. Kirby, H. Hearne, V. Veliadis Trans Tech Publications
4 Conference Proceedings Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices H. Elahipanah, A. Salemi, C.M. Zetterling, M. Östling Trans Tech Publications	10 Conference Proceedings Monolithically Integrated Solid-State-Circuit-Breaker for High Power Applications A. Huerner, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications
5 Conference Proceedings Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs M. Albrecht, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications	11 Conference Proceedings Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET M. Albrecht, A. Huerner, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications
6 Conference Proceedings 4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density J. Schoeck, J. Buettner, M. Rommel, T. Erlbacher, A.J. Bauer Trans Tech Publications	12 Conference Proceedings Grayscale Junction Termination for High-Voltage SiC Devices E.A. Imhoff, F.J. Kub, K.D. Hobart Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12