The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices

The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices

Author(s):

Publication title:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Title of ser.:

Materials science forum

Ser. no.:

821-823

Pub. Year:

2015

Page(from):

652

Page(to):

655

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054285
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
Conf. info. (Number):	2014
Conf. info. (Venue):	Grenoble, France
Conf. info. (Date):	2014.09.21-2014.09.25
Note for article:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Similar Items:

1 Conference Proceedings Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring K. Mochizuki, H. Okino, H. Matsushima, Y. Toyota Trans Tech Publications	7 Conference Proceedings Analysis of Breakdown Voltage and Specific On-Resistance of 4H-SiC Vertical Power MOSFET Kumar, A., Khanna, V.K., Sood, S.C., Gupta, R.P. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices K. Mochizuki, H. Onose Trans Tech Publications	8 Conference Proceedings 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis H. Rong, Y.K. Sharma, F. Li, M.R. Jennings, P.A. Mawby Trans Tech Publications
3 Conference Proceedings Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges A. Salemi, H. Elahipanah, C.M. Zetterling, M. Östling Trans Tech Publications	9 Conference Proceedings A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J. Trans Tech Publications
4 Conference Proceedings Effect of Fixed Oxide Charges and Donor-Like Interface Traps on the Breakdown Voltage of SiC Devices with FGR and JTE Terminations C.T. Yen, H.T. Hung, C.C. Hung, C.Y. Lee, L.S. Lee Trans Tech Publications	10 Conference Proceedings Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects Domeij, M., Brunahl, H., Ostling, M. Trans Tech Publications
5 Conference Proceedings Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes H. Vang, S. Scharnholz, C. Raynaud, M. Lazar, G. Pâques Trans Tech Publications	11 Conference Proceedings Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects Domeij, M., Brunahl, H., Ostling, M. Trans Tech Publications
6 Conference Proceedings Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes H. Okino, N. Kameshiro, K. Konishi, N. Inada, K. Mochizuki Trans Tech Publications	12 Conference Proceedings Avalanche Multiplication and Breakdown in 4H-SiC Diodes Ng, B.K., David, J.P.R., Massey, D.J., Tozer, R.C., Rees, G.J., Yan, F., Zhao, J.H., Weiner, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12