Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation

Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation

Author(s):

Publication title:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Title of ser.:

Materials science forum

Ser. no.:

821-823

Pub. Year:

2015

Page(from):

488

Page(to):

491

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054285
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
Conf. info. (Number):	2014
Conf. info. (Venue):	Grenoble, France
Conf. info. (Date):	2014.09.21-2014.09.25
Note for article:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Similar Items:

1 Conference Proceedings Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor J.H. Xia, D.M. Martin, S.S. Suvanam, C.M. Zetterling, M. Östling Trans Tech Publications	7 Conference Proceedings Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT A. Salemi, H. Elahipanah, B. Buono, C.M. Zetterling, M. Östling Trans Tech Publications
2 Conference Proceedings Total Dose Effects on 4H-SiC Bipolar Junction Transistors S.S. Suvanam, L. Lanni, B.G. Malm, C.M. Zetterling, A. Hallén Trans Tech Publications	8 Conference Proceedings 10+ kV Implantation-Free 4H-SiC PiN Diodes A. Salemi, H. Elahipanah, C.M. Zetterling, M. Östling Trans Tech Publications
3 Conference Proceedings Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy J.H. Lee, J.J. Ahn, A. Hallén, C.M. Zetterling, S.M. Koo Trans Tech Publications	9 Conference Proceedings Alkali Metal Re-Distribution after Oxidation of 4H-SiC M.K. Linnarsson, S.S. Suvanam, L. Vines, A. Hallén Trans Tech Publications
4 Conference Proceedings Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS S.S. Suvanam, M.G. Yazdi, M. Usman, M. Götelid, A. Hallén Trans Tech Publications	10 Conference Proceedings A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements S.S. Suvanam, M. Usman, K. Gulbinas, V. Grivickas, A. Hallén Trans Tech Publications
5 Conference Proceedings Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles M.S. Kang, J.H. Lee, A. Hallén, C.M. Zetterling, W. Bahng Trans Tech Publications	11 Conference Proceedings Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability R. Ghandi, H.S. Lee, M. Domeij, B. Buono, C.M. Zetterling Trans Tech Publications
6 Conference Proceedings Improved Properties of AlON/4H SiC Interface for Passivation Studies M. Wolborski, D.M. Martin, M. Bakowski, A. Hallén, I. Katardjiev Trans Tech Publications	12 Conference Proceedings Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges A. Salemi, H. Elahipanah, C.M. Zetterling, M. Östling Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12