Polarity Inversion of SiC(0001) during the Al Doped PVT Growth

Polarity Inversion of SiC(0001) during the Al Doped PVT Growth

Author(s):

Publication title:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Title of ser.:

Materials science forum

Ser. no.:

821-823

Pub. Year:

2015

Page(from):

73

Page(to):

76

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054285
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
Conf. info. (Number):	2014
Conf. info. (Venue):	Grenoble, France
Conf. info. (Date):	2014.09.21-2014.09.25
Note for article:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Similar Items:

1 Conference Proceedings Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping K. Eto, H. Suo, T. Kato, H. Okumura Trans Tech Publications	7 Conference Proceedings Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001) S. Tsukimoto, T. Ise, G. Maruyama, S. Hashimoto, T. Sakurada, J. Senzaki, T. Kato, K. Kojima, H. Okumura Trans Tech Publications
2 Conference Proceedings Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping H. Suo, K. Eto, T. Kato, K. Kojima, H. Osawa, H. Okumura Trans Tech Publications	8 Conference Proceedings Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces Y. Ishida, T. Takahashi, H. Okumura, K. Arai, S. Yoshida Trans Tech Publications
3 Conference Proceedings Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique T. Kato, K. Eto, S. Takagi, T. Miura, Y. Urakami Trans Tech Publications	9 Conference Proceedings Enlargement Growth of Large 4H-SiC Bulk Single Crystal T. Kato, T. Miura, I. Nagai, H. Taniguchi, H. Kawashima Trans Tech Publications
4 Conference Proceedings Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method K. Eto, T. Kato, S. Takagi, T. Miura, Y. Urakami Trans Tech Publications	10 Conference Proceedings PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate Polychroniadis, E. K., Mantzari, A., Freudenberg, A., Wollweber, J., Nitschke, R., Frank, T., Pensl, G., Schoner, A. Trans Tech Publications
5 Conference Proceedings Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping T. Kato, T. Miura, K. Wada, E. Hozomi, H. Taniguchi, S.I. Nishizawa, K. Arai Trans Tech Publications	11 Conference Proceedings Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy T. Kitamura, S. Nakashima, T. Kato, K. Kojima, H. Okumura Trans Tech Publications
6 Conference Proceedings Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth Ishida, Y., Takahashi, T., Kojima, K., Okumura, H., Arai, K., Yoshida, S. Trans Tech Publications	12 Conference Proceedings Investigation of In-Grown Dislocations in 4II-SiC Epitaxial Layers Kojima, K., Kato, T., Kuroda, S., Okumura, H., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12