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Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3

Author(s):
Publication title:
HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France
Title of ser.:
Materials science forum
Ser. no.:
806
Pub. Year:
2015
Page(from):
143
Page(to):
148
Pages:
6
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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