Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures

Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO₂/4H-SiC MOS Structures

Author(s):

Publication title:

HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France

Title of ser.:

Materials science forum

Ser. no.:

806

Pub. Year:

2015

Page(from):

133

Page(to):

138

Pages:

6

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054271
Series ID:	PA00000012
Conf. info. (Name):	Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013)
Conf. info. (Number):	5th
Conf. info. (Venue):	Nice, France
Conf. info. (Date):	2013.06.17-2013.06.19
Note for article:	5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France

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