Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices

Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

2

Page(from):

1114

Page(to):

1117

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Pressureless Silver Sintering Die-Attach for SiC Power Devices S. Hascoët, C. Buttay, D. Planson, R. Chiriac, A. Masson Trans Tech Publications	7 Conference Proceedings High Temperature Reliability of SiC n-MOS Devices up to 630oC Ghosh, R.N., Loloee, R., Isaacs-Smith, T., Williams, J.R. Trans Tech Publications
2 Conference Proceedings *PROCESSING AND HIGH TEMPERATURE DEFORMATION OF Nb3Al Murayama, Y., Kumagai, T., Hanada, S. Materials Research Society	8 Conference Proceedings Comparative Study of SiC MOSFETs in High Voltage Switching Operation T. Funaki, Y. Nakano, T. Nakamura Trans Tech Publications
3 Conference Proceedings SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices T. Chailloux, C. Calvez, N. Thierry-Jebali, D. Planson, D. Tournier Trans Tech Publications	9 Conference Proceedings High-Temperature Reliability of SiC Power MOSFETs A.J. Lelis, R. Green, D.B. Habersat Trans Tech Publications
4 Conference Proceedings Reliability of High-Temperature Operation for GaN-Based OPAMP Kazuki Nomoto, Kazuya Hasegawa, Masataka Satoh, Tohru Nakamura Materials Research Society	10 Conference Proceedings Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures S. Tanimoto, N. Nishio, T. Suzuki, Y. Murakami, H. Ohashi Trans Tech Publications
5 Conference Proceedings SiC Power Devices for High-Temperature And High-Power Applications Xie, K., Flemish, J.R., Burke, T., Bushwald, W.R. Electrochemical Society	11 Conference Proceedings High Temperature Reliability of the SiC-MOSFET with Copper Metallization H. Okabe, M. Yoshida, T. Tominaga, J. Fujita, K. Endo Trans Tech Publications
6 Conference Proceedings Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature S. Tanimoto, T. Suzuki, A. Hanamura, M. Hoshi, T. Shinohara, K. Arai Trans Tech Publications	12 Conference Proceedings High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices K. Tezuka, T. Tsuyuki, S. Shimizu, S. Nakamata, T. Tsuji Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12