Comparison of 600V Si, SiC and GaN Power Devices

Comparison of 600V Si, SiC and GaN Power Devices

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

2

Page(from):

971

Page(to):

974

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Progress in High Voltage SiC and GaN Power Switching Devices T.P. Chow Trans Tech Publications	7 Conference Proceedings SiC and GaN MOS Interfaces - Similarities and Differences T.P. Chow Trans Tech Publications
2 Conference Proceedings Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures S. Chowdhury, C.W. Hitchcock, T.P. Chow Trans Tech Publications	8 Conference Proceedings Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC Z. Stum, Y. Tang, H. Naik, T.P. Chow Trans Tech Publications
3 Conference Proceedings Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs K. Yamamoto, S. Chowdhury, T.P. Chow Trans Tech Publications	9 Conference Proceedings SiC And GaN High-Voltage Power Devices Chow, T. Paul Materials Research Society
4 Conference Proceedings Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC S. Chowdhury, K. Yamamoto, T.P. Chow Trans Tech Publications	10 Conference Proceedings Gallium Nitride Power Device Design Tradeoffs Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications
5 Conference Proceedings Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC S. Chowdhury, K. Yamamoto, C. Hitchcock, T.P. Chow Trans Tech Publications	11 Conference Proceedings Gallium Nitride Power Device Design Tradeoffs Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications
6 Conference Proceedings SiC and GaN High-Voltage Power Switching Devices Chow, T. P. Trans Tech Publications	12 Conference Proceedings SiC Power Devices Chow, T. P., Ghezzo, M. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12