4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

1

Page(from):

607

Page(to):

610

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC S. Chowdhury, K. Yamamoto, C. Hitchcock, T.P. Chow Trans Tech Publications	7 Conference Proceedings Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications
2 Conference Proceedings Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors H. Naik, Z. Li, H. Issa, Y.L. Tian, T.P. Chow Trans Tech Publications	8 Conference Proceedings Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications
3 Conference Proceedings Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs H. Naik, T.P. Chow Trans Tech Publications	9 Conference Proceedings Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates H. Naik, K. Tang, T. Marron, T.P. Chow, J.A. Fronheiser Trans Tech Publications
4 Conference Proceedings Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs H. Naik, T.P. Chow Trans Tech Publications	10 Conference Proceedings Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC Z. Stum, Y. Tang, H. Naik, T.P. Chow Trans Tech Publications
5 Conference Proceedings Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs H. Naik, K. Tang, T.P. Chow Trans Tech Publications	11 Conference Proceedings Optimization of 4H-SiC MOS Properties with Cesium Implantation Y. Wang, T. Khan, T.P. Chow Trans Tech Publications
6 Conference Proceedings Experimental Identification of Extra Type of Charges at SiO₂/SiC Interface in 4H-SiC H. Naik, Z. Li, T.P. Chow Trans Tech Publications	12 Conference Proceedings SiC and GaN MOS Interfaces - Similarities and Differences T.P. Chow Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12