Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

1

Page(from):

243

Page(to):

246

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy G. Zoulis, J. Sun, R. Vasiliauskas, J. Lorenzzi, H. Peyre Trans Tech Publications	7 Conference Proceedings Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon P. Hens, J. Müller, G. Wagner, R. Liljedahl, R. Yakimova Trans Tech Publications
2 Conference Proceedings Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy J.W. Sun, S. Kamiyama, P. Wellmann, R. Liljedahl, R. Yakimova Trans Tech Publications	8 Conference Proceedings Structural Properties of 3C-SiC Grown by Sublimation Epitaxy M. Beshkova, M. Syväjärvi, R. Vasiliauskas, J. Birch, R. Yakimova Trans Tech Publications
3 Conference Proceedings Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, L. Konczewicz Trans Tech Publications	9 Conference Proceedings Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy Davydov, D. V., Lebedev, A. A., Tregubova, A. S., Kozlovski, V. V., Kuznetsov, A. N., Bogdanova, E. V. Trans Tech Publications
4 Conference Proceedings Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy G. Zoulis, J.W. Sun, M. Beshkova, R. Vasiliauskas, S. Juillaguet Trans Tech Publications	10 Conference Proceedings Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation Tuominen,M., Yakimova,R., Kakanakova-Georgieva,A., MacMillan,M.F., Syvajarvi,M., Janzen,E. Trans Tech Publications
5 Conference Proceedings Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers G. Manolis, M. Beshkova, M. Syväjärvi, R. Yakimova, K. Jarašiūnas Trans Tech Publications	11 Conference Proceedings Properties of AlN Layers Grown by Sublimation Epitaxy Beshkova, M., Zakhariev, Z., Birch, J., Kakanakova, A., Yakimova, R. Trans Tech Publications
6 Conference Proceedings Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates J.W. Sun, T. Robert, V. Jokubavicius, S. Juillaguet, R. Yakimova Trans Tech Publications	12 Conference Proceedings Optical Characterization of p-Type 4H-SiC Epilayers G. Liaugaudas, D. Dargis, P. Kwasnicki, H. Peyre, R. Arvinte Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12