Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates
- Author(s):
- Publication title:
- Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
- Title of ser.:
- Materials science forum
- Ser. no.:
- 778-780
- Pub. Year:
- 2014
- Pt.:
- 1
- Page(from):
- 171
- Page(to):
- 174
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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