Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC

Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

1

Page(from):

63

Page(to):

66

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds T. Umezaki, D. Koike, S. Harada, T. Ujihara Trans Tech Publications	7 Conference Proceedings Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth T. Ujihara, S. Kozawa, K. Seki, Y. Yamamoto, S. Harada Trans Tech Publications
2 Conference Proceedings Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada Trans Tech Publications	8 Conference Proceedings Polytype Stability of 4H-SiC Seed Crystal on Solution Growth K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara, Y. Takeda Trans Tech Publications
3 Conference Proceedings Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method K. Seki, S. Harada, T. Ujihara Trans Tech Publications	9 Conference Proceedings Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent S. Harada, Y. Yamamoto, S.Y. Xiao, M. Tagawa, T. Ujihara Trans Tech Publications
4 Conference Proceedings Dislocation Conversion During SiC Solution Growth for High-Quality Crystals S. Harada, Y. Yamamoto, S.Y. Xiao, D. Koike, T. Mutoh Trans Tech Publications	10 Conference Proceedings Solvent Design for High-Purity SiC Solution Growth S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara Trans Tech Publications
5 Conference Proceedings 3C-SiC Crystal on Sapphire by Solution Growth Method K. Shibata, S. Harada, T. Ujihara Trans Tech Publications	11 Conference Proceedings Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara Trans Tech Publications
6 Conference Proceedings Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC S. Harada, Y. Yamamoto, K. Seki, T. Ujihara Trans Tech Publications	12 Conference Proceedings Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Y. Yamamoto, K. Seki, S. Kozawa, S. Harada, T. Ujihara Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12