Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis

Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

1

Page(from):

43

Page(to):

46

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals T. Takahashi, C. Ohshige, N. Ohtani, M. Katsuno, T. Fujimoto Trans Tech Publications	7 Conference Proceedings Growth and Defect Reduction of Bulk SiC Crystals Ohtani, N., Fujimoto, T., Katsuno, M., Aigo, T., Yashiro, H. Trans Tech Publications
2 Conference Proceedings High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge Trans Tech Publications	8 Conference Proceedings Growth and Defect Reduction of Bulk SiC Crystals Ohtani, N., Fujimoto, T., Katsuno, M., Aigo, T., Yashiro, H. Trans Tech Publications
3 Conference Proceedings Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals T. Fujimoto, N. Ohtani, S. Sato, M. Katsuno, H. Tsuge Trans Tech Publications	9 Conference Proceedings Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC Katsuno, M., Ohtani, N., Fujimoto, T., Aigo, T., Yashiro, H. Trans Tech Publications
4 Conference Proceedings Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities M. Nakabayashi, T. Fujimoto, M. Katsuno, N. Ohtani, H. Tsuge Trans Tech Publications	10 Conference Proceedings Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC Katsuno, M., Ohtani, N., Fujimoto, T., Aigo, T., Yashiro, H. Trans Tech Publications
5 Conference Proceedings 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots Fujimoto, T., Katsuno, M., Ohtani, N., Aigo, T., Yashiro, H. Trans Tech Publications	11 Conference Proceedings Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal Katsuno, M., Ohtani, N., Fujimoto, T., Yashiro, H. Trans Tech Publications
6 Conference Proceedings 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots Fujimoto, T., Katsuno, M., Ohtani, N., Aigo, T., Yashiro, H. Trans Tech Publications	12 Conference Proceedings Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals C. Taniguchi, A. Ichimura, N. Ohtani, M. Katsuno, T. Fujimoto Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12