Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing

Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl₃ Annealing

Author(s):

Publication title:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Title of ser.:

Materials science forum

Ser. no.:

740-742

Pub. Year:

2013

Page(from):

727

Page(to):

732

Pages:

6

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054223
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Conf. info. (Number):	9th
Conf. info. (Venue):	St. Petersburg, Russian Federation
Conf. info. (Date):	2012.09.02-2012.09.06
Note for article:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

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