Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
- Author(s):
- Publication title:
- Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation
- Title of ser.:
- Materials science forum
- Ser. no.:
- 740-742
- Pub. Year:
- 2013
- Page(from):
- 565
- Page(to):
- 568
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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