Blank Cover Image

Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties

Author(s):
Publication title:
Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation
Title of ser.:
Materials science forum
Ser. no.:
740-742
Pub. Year:
2013
Page(from):
157
Page(to):
160
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

J. Hassan, C. Virojanadara, A. Meyer, I.G. Ivanov, J.I. Flege

Trans Tech Publications
7 Conference Proceedings Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface

S. Sonde, C. Vecchio, F. Giannazzo, R. Yakimova, E. Rimini

Trans Tech Publications
2 Conference Proceedings Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth

X. Li, J. ul Hassan, O. Kordina, E. Janzén, A. Henry

Trans Tech Publications
8 Conference Proceedings A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates

M. Winters, M. Thorsell, J. ul Hassan, N. Rorsman, E. Janzén

Trans Tech Publications
3 Conference Proceedings Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)

S. Sonde, C. Vecchio, F. Giannazzo, C. Bongiorno, S. Di Franco

Trans Tech Publications
9 Conference Proceedings Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

L. Lilja, I. Farkas, I. Booker, J. ul Hassan, E. Janzén, J.P. Bergman

Trans Tech Publications
4 Conference Proceedings Improved Epilayer Surface Morphology on 2° Off-Cut 4H-SiC Substrates

L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman

Trans Tech Publications
10 Conference Proceedings Evolution and Structure of Graphene Layers on SiC(0001)

C. Riedl, J. Bernardt, K. Heinz, U. Starke

Trans Tech Publications
5 Conference Proceedings Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates

ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E.

Trans Tech Publications
11 Conference Proceedings Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers

J. Ul Hassan, H.T. Bae, L. Lilja, I. Farkas, I. Kim

Trans Tech Publications
6 Conference Proceedings Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers

L. Lilja, J. ul Hassan, I.D. Booker, P. Bergman, E. Janzén

Trans Tech Publications
12 Conference Proceedings TEM Investigations of Graphene on 4H-SiC(0001)

J. Borysiuk, W. Strupiński, R. Bożek, A. Wysmolek, J.M. Baranowski

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12