Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene

Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene

Author(s):

Publication title:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Title of ser.:

Materials science forum

Ser. no.:

740-742

Pub. Year:

2013

Page(from):

149

Page(to):

152

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054223
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Conf. info. (Number):	9th
Conf. info. (Venue):	St. Petersburg, Russian Federation
Conf. info. (Date):	2012.09.02-2012.09.06
Note for article:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Similar Items:

1 Conference Proceedings Gated Epitaxial Graphene Devices D. Waldmann, J. Jobst, F. Speck, T. Seyller, M. Krieger Trans Tech Publications	7 Conference Proceedings Hyperthermal Nitridation for Ultrathin Silicon Oxynitride Gate Dielectrics Krug, C., Baumvol, I.J.R., Stedile, F.C., Green, M.L., Klemens, F., Silverman, P.J., Sorsch, T.W., Alvarez, F., Hammer, … Electrochemical Society
2 Conference Proceedings Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy F. Fromm, M. Hundhausen, M. Kaiser, T. Seyller Trans Tech Publications	8 Conference Proceedings 32 Development of 12 A plasma nitrided gate dielectrics through characterization of pfocess, physical and electrical parameters Miner, G., Kraus, P., Chua, T-C., Holland, J., Olsen, C., Ahmed, K., Hegedus, A., Hung, S., Noon, F., Iierrera-Gomez, … Electrochemical Society
3 Conference Proceedings Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy J. Röhrl, M. Hundhausen, F. Speck, T. Seyller Trans Tech Publications	9 Conference Proceedings Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al₂O₃ Gate Dielectric Fabricated on SiC Substrates T. Hopf, K. Vassilevski, E. Escobedo-Cousin, P. King, N.G. Wright Trans Tech Publications
4 Conference Proceedings Development of Silicon Nitride Films for Gate Dielectric Applications Brady, D., Watt, V.H.C., Karamcheti, A., Vishnubhotla, L., Bersuker, G., Kim, S., Zietzoff, P., Gilmer, M., Guan, J., … Electrochemical Society	10 Conference Proceedings The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation Gila, B. P., Luo, B., Kim, J., Mehandru, R., LaRoche, J. R., Onstine, A. H., Lambers, E., Siebein, K., Abernathy, C. R., … Materials Research Society
5 Conference Proceedings JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics Ma, T. P. MRS - Materials Research Society	11 Conference Proceedings Recent Progress in Gate Dielectric Scaling Higashi, G., Kraus, P., Chua, T.C., Olsen, C., Ahmed, K., Nouri, F., Kher, S.S., Sharangpani, R., Deaton, P., Ulloa, … Electrochemical Society
6 Conference Proceedings Remote plasma nitrided oxides for ultrathin gate dielectric applications (Invited Paper) Hattangady,S.V., Grider,O.T., Kraft,R., Shiau,W.-T., Douglas,M.A., Nicollian,P., Rodder,M., Brown,G.A., Chatterjee,A., … SPIE-The International Society for Optical Engineering	12 Conference Proceedings Ultrathin Silicon Oxynitride Gate Dielectrics Gusev, E.P., D'Emic, C.P., Zabel, T.H., Copel, M. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12