Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

Author(s):

Publication title:

Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

725

Pub. Year:

2012

Page(from):

41

Page(to):

44

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054212
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
Conf. info. (Number):	14th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2011.09.25-2011.09.29
Note for article:	14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan

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