Blank Cover Image

Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage

Author(s):
Publication title:
Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
Title of ser.:
Materials science forum
Ser. no.:
717-720
Pub. Year:
2012
Pt.:
2
Page(from):
1299
Page(to):
1302
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates

Irokawa, Y., Luo, B., Kim, Jihyun, Kang, B.S., LaRoche, J.R., Ren, F, Pan, C.-C., Chen, G.T., Chyi, J.-I., Park, S.S., …

Electrochemical Society
7 Conference Proceedings Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate

Nagasawa, H., Yagi, K., Kawahara, T., Hatta, N.

Trans Tech Publications
2 Conference Proceedings High Electron Mobility in Free-Standing GaN Substrates

Saxler, A., Look, D. C., Elhamri, S., Sizelove, J., Cull, D., Mitchel, W.C., Callahan, M., Bliss, D., Bouthillette, L., …

Materials Research Society
8 Conference Proceedings High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

T. Horii, T. Miyazaki, Y. Saito, S. Hashimoto, T. Tanabe

Trans Tech Publications
3 Conference Proceedings Hydrogen Sensitive Schottky Diodes on Free-Standing GaN

L. Voss, H. T. Wang, B. P. Gila, S. J. Pearton, F. Ren

Electrochemical Society
9 Conference Proceedings Laser-Induced Liftoff And Laser Patterning Of Large Free-Standing GaN Substrates

Park, Kee-Chan, Jung, Sang-Hoon, Nam, Woo-Jin, Han, Min-Koo

Materials Research Society
4 Conference Proceedings High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress

Paskova, T., Suski, T., Bockowski, M., Paskov, P. P., Darakchieva, V., Monemar, B., Tuomisto, F., Saarinen, K., …

Materials Research Society
10 Conference Proceedings Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

Ivanov, P. A., Levinshtein, M. E., Mnatsakanov, T. T., Palmour, J. W., Singh, R., Irvin, K. G., Das, M.

Trans Tech Publications
5 Conference Proceedings Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance

K. Nomoto, M. Satoh, T. Nakamura

Trans Tech Publications
11 Conference Proceedings Improved GaN Homo-Junction, Ultraviolet, Light-Emitting Diodes Grown on Step- Free 4H-SiC Mesas

J. D. Caldwell, M. Mastro, K. D. Hobart, O. Glembocki, C. R. Eddy, N. Bassim, M. Tadjer, A. Holm, R. Henry, M. Ywigg, P. …

Electrochemical Society
6 Conference Proceedings Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE

Y.Z. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, K. Tadatomo

Trans Tech Publications
12 Conference Proceedings 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis

H. Rong, Y.K. Sharma, F. Li, M.R. Jennings, P.A. Mawby

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12