Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

Author(s):

Publication title:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Title of ser.:

Materials science forum

Ser. no.:

717-720

Pub. Year:

2012

Pt.:

2

Page(from):

757

Page(to):

760

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054207
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
Conf. info. (Number):	14th
Conf. info. (Venue):	Cleveland, Ohio, USA
Conf. info. (Date):	2011.09.11-2011.09.16
Note for article:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Similar Items:

1 Conference Proceedings Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces A.F. Basile, S. Dhar, J.R. Williams, L.C. Feldman, P.M. Mooney Trans Tech Publications	7 Conference Proceedings Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC McDonald, K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Chung, G.Y, Tin, C.C., Williams, J.R. Electrochemical Society
2 Conference Proceedings Near-Interface Traps in n-type SiO₂/SiC MOS Capacitors from Energy-Resolved CCDLTS Alberto F. Basile, Sarit Dhar, John Rozen, Xudong Chen, John R. Williams, Leonard C. Feldman, Patricia M. Mooney Materials Research Society	8 Conference Proceedings The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors S.M. Thomas, M.R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby Trans Tech Publications
3 Conference Proceedings Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs Ahyi, A.C., Wang, S.R., Williams, J.R. Trans Tech Publications	9 Conference Proceedings Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors S.M. Thomas, M.R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby Trans Tech Publications
4 Conference Proceedings Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface Dhar, S., Wang, S.R., Ahyi, A.C., Isaacs-Smith, T., Pantelides, S.T., Williams, J.R., Feldman, L.C. Trans Tech Publications	10 Conference Proceedings Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications
5 Conference Proceedings The Limits of Post Oxidation Annealing in NO J. Rozen, X.G. Zhu, A.C. Ahyi, J.R. Williams, L.C. Feldman Trans Tech Publications	11 Conference Proceedings Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications
6 Conference Proceedings Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen Williams, J. R., Isaacs-Smith, T., Wang, S., Ahyi, C., Lawless, R. M., Tin, C. C., Dhar, S., Franceschetti, A., … Materials Research Society	12 Conference Proceedings Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States A.F. Basile, J. Rozen, X.D. Chen, S. Dhar, J.R. Williams Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12