Challenges of High-Performance and High-Reliablity in SiC MOS Structures

Challenges of High-Performance and High-Reliablity in SiC MOS Structures

Author(s):

Publication title:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Title of ser.:

Materials science forum

Ser. no.:

717-720

Pub. Year:

2012

Pt.:

2

Page(from):

703

Page(to):

708

Pages:

6

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054207
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
Conf. info. (Number):	14th
Conf. info. (Venue):	Cleveland, Ohio, USA
Conf. info. (Date):	2011.09.11-2011.09.16
Note for article:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Similar Items:

1 Conference Proceedings Electrical Properties of MOS Structures on 4H-SiC (11-20) Face J. Senzaki, A. Shimozato, K. Kajima, K. Aryoshi, T. Kojima Trans Tech Publications	7 Conference Proceedings Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer J. Senzaki, A. Shimozato, K. Koshikawa, Y. Tanaka, K. Fukuda Trans Tech Publications
2 Conference Proceedings Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer Senzaki, J., Kojima, K., Kato, T., Shimozato, A., Fukuda, K. Trans Tech Publications	8 Conference Proceedings 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs Fukuda, K., Kato, M., Senzaki, J., Kojima, K., Suzuki, T. Trans Tech Publications
3 Conference Proceedings Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility H. Yoshioka, T. Nakamura, J. Senzaki, A. Shimozato, Y. Tanaka Trans Tech Publications	9 Conference Proceedings Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers J. Senzaki, A. Shimozato, K. Fukuda Trans Tech Publications
4 Conference Proceedings Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides … Senzaki, J., Shimozato, A., Fukuda, K. Trans Tech Publications	10 Conference Proceedings Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face Fukuda, K., Suzuki, S., Senzaki, J., Cho, W.J., Tanaka, T., Arai, K. Trans Tech Publications
5 Conference Proceedings Gate-Area Dependence of SiC Thermal Oxides Reliability J. Senzaki, A. Shimozato, M. Okamoto, K. Kojima, K. Fukuda Trans Tech Publications	11 Conference Proceedings A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kushibe, M., Kojima, K., Kosugi, R., Suzuki, S., Harada, S., Suzuki, T., Tanaka, T., Arai, K. Trans Tech Publications
6 Conference Proceedings Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces J. Senzaki, A. Shimozato, K. Kojima, S. Harada, K. Ariyoshi Trans Tech Publications	12 Conference Proceedings A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kushibe, M., Kojima, K., Kosugi, R., Suzuki, S., Harada, S., Suzuki, T., Tanaka, T., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12