Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress

Author(s):

• Y. Sun
• S. Izumi
• S. Sakai
• K. Yagi
• H. Nagasawa

Publication title:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Title of ser.:

Materials science forum

Ser. no.:

717-720

Pub. Year:

2012

Pt.:

1

Page(from):

501

Page(to):

504

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings