Blank Cover Image

Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD

Author(s):
Publication title:
Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
Title of ser.:
Materials science forum
Ser. no.:
717-720
Pub. Year:
2012
Pt.:
1
Page(from):
181
Page(to):
184
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD

H. Shimizu, A. Kato

Trans Tech Publications
7 Conference Proceedings Low-Temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane

A. Konno, Y. Narita, T. Itoh, K. Yasui, H. Nakzawa, T. Endoh, M. Suemitsu

Electrochemical Society
2 Conference Proceedings Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD

H. Shimizu, A. Kato

Trans Tech Publications
8 Conference Proceedings Low-Temperature Growth of Crystalline Silicon Thin Films by ECR Plasma CVD

Wang, Licai., Reehal, H. S.

MRS - Materials Research Society
3 Conference Proceedings Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD

H. Shimizu, A. Kato

Trans Tech Publications
9 Conference Proceedings Ultra-Low Temperature Growth of High-Integrity Gate Oxide Films by Low-Energy Ion-Assisted Oxidation

Kawai, Y., Konishi, N., Watanabe, J., Ohmi, T.

Electrochemical Society
4 Conference Proceedings Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD

Shimizu,H., Shiga,M.

Trans Tech Publications
10 Conference Proceedings Corona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) Pseudosubstrates

J. Reiprich, T. Stauden, T. Berthold, M. Himmerlich, J. Pezoldt, H.O. Jacobs

Trans Tech Publications
5 Conference Proceedings Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

Shimizu, H., Aoyama, Y.

Trans Tech Publications
11 Conference Proceedings Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

N. Jegenyes, J. Lorenzzi, V. Soulière, J. Dazord, F. Cauwet

Trans Tech Publications
6 Conference Proceedings Growth of 3C-SiC on Si by Low Temperature CVD

Cloitre, T., Moreaud, N., Vicente, P., Sadowski, M.L., Aulombard, R.L.

Trans Tech Publications
12 Conference Proceedings THE ROLE OF ATOMIC HYDROGEN AND OXYGEN IN LOW TEMPERATURE GROWTH OF DIAMOND BY MICROWAVE PLASMA ASSISTED CVD

Muranaka, Y., Yamashita, H., Miyadera, H.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12