Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon
- Author(s):
- Publication title:
- HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France
- Title of ser.:
- Materials science forum
- Ser. no.:
- 711
- Pub. Year:
- 2012
- Page(from):
- 213
- Page(to):
- 217
- Pages:
- 5
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and C-TLM Measurements
Trans Tech Publications |
7
Conference Proceedings
Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire
Trans Tech Publications |
2
Conference Proceedings
Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
9
Conference Proceedings
Formation of Ti:sapphire via high-temperature processing of Ti-implanted sapphire crystals
SPIE - The International Society of Optical Engineering |
Trans Tech Publications |
10
Conference Proceedings
DEFECT REDUCTION AND DEFECT ENGINEERING IN SILICON-ON-SAPPHIRE MATERIAL USING Ge IMPLANTATION
Materials Research Society |
MRS-Materials Research Society |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
American Chemical Society |