Blank Cover Image

Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime

Author(s):
Publication title:
Advanced materials and nanotechnology : selected, peer reviewed papers from the 5th Biennial Conference on Advanced Materials and Nanotechnology (AMN-5), February 7-11, 2011, Wellington, New Zealand
Title of ser.:
Materials science forum
Ser. no.:
700
Pub. Year:
2012
Page(from):
93
Page(to):
95
Pages:
3
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Single-electron transistor coupled to a silicon nano-MOSFET

Chan, V. C., Buehler, T. M., McCamey, D. R., Ferguson, A., Reilly, D. J., Yang, C., Hopt, T., Dzurak, A. S., Hamilton, …

SPIE - The International Society of Optical Engineering
7 Conference Proceedings Atomic Layer Deposition of High-κ/Metal Gate Stack MOSFET-Devices on Strained Silicon-on-Insulator Substrates

C. Henkel, S. Abermann, O. Bethge, M. Reiche, E. Bertagnolli

Electrochemical Society
2 Conference Proceedings Nanoscale single-electron transistor architectures for single spin detection in solid state quantum computer devices

Buehler, T.M., Brenner, R., Reilly, D.J., Hamilton, A.R., Dzurak, A.S., Clark, R.G.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Nanoscale phosphorous atom arrays created using STM for the fabricaton of a silicon-based quantum computer

O'Brien, J.L., Schofield, S.R., Simmons, M.Y., Clark, R.G., Dzurak, A.S., Curson, N.J., Kane, B.E., McAlpine, N.S., …

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Irradiation Effects of 1 MeV Electrons and 50 MeV Heavy Ions on P-N Junction Silicon Diodes and N-/P-Channel Power MOSFETs

Shinde,N.S., Sathyavathi,P., Dhole,S.D., Bhoraskar,V.N.

SPIE - The International Society for Optical Engineering
9 Conference Proceedings High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W.

Trans Tech Publications
4 Conference Proceedings Alternate Gate Oxides for Silicon MOSFETs Using High-K Dielectrics

Billman, C. A., Tan, P. H., Hubbard, K. J., Schlom, D. G.

MRS - Materials Research Society
10 Conference Proceedings High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W.

Trans Tech Publications
5 Conference Proceedings Comparison of LDD and double-gate MOSFET for nanoscale devices

Ko, S.-W., Kim, J.-H., Jung, H.-K.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings Formation of helical electron beams in gyroresonance devices in a strongly inhomogeneous magnetic field

Belov,S.P., Kuftin,A.N., Manuilov,V.N., Tsimring,Sh.E.

SPIE - The International Society for Optical Engineering
6 Conference Proceedings Employing Step-and-Flash imprint lithography for gate-level patterning of a MOSFET device

Smith, B.J., Stacey, N.A., Donnelly, J.P., Onsongo, D.M., Bailey, T.C., Mackay, C.J., Resnick, D.J., Dauksher, W.J., …

SPIE-The International Society for Optical Engineering
12 Conference Proceedings InGaP/InGaAs Dual Gate Pseudomorphic High Electron Mobility Transistors

Lour, W.S., Tsai, M.K., Chen, K.C., Wu, Y.W., Tan, S.W., Yang, Y.J.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12