Influences of Nitrogen Partial Flux on the Phase Structures and Electrical Properties of Aluminium Doping TaNX Thin Films

Influences of Nitrogen Partial Flux on the Phase Structures and Electrical Properties of Aluminium Doping TaN_X Thin Films

Author(s):

Publication title:

Functional and electronic materials : selected, peer reviewed papers from IUMRS-ICA 2010, 11th IUMRS International Conference in Asia, 25-28 September 2010, Qingdao, China

Title of ser.:

Materials science forum

Ser. no.:

687

Pub. Year:

2011

Page(from):

673

Page(to):

676

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054184
Series ID:	PA00000012
Conf. info. (Name):	IUMRS International Conference in Asia (IUMRS-ICA 2010)
Conf. info. (Number):	11th
Conf. info. (Venue):	Qingdao, China
Conf. info. (Date):	2010.09.25-2010.09.28
Note for article:	11th IUMRS International Conference in Asia (IUMRS-ICA 2010), 25-28 September 2010, Qingdao, China

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