Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
- Author(s):
- Publication title:
- Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd
- Title of ser.:
- Materials science forum
- Ser. no.:
- 679-680
- Pub. Year:
- 2011
- Page(from):
- 678
- Page(to):
- 681
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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