Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition

Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition

Author(s):

Publication title:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Title of ser.:

Materials science forum

Ser. no.:

679-680

Pub. Year:

2011

Page(from):

441

Page(to):

444

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054177
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
Conf. info. (Number):	8th
Conf. info. (Venue):	Oslo, Norway
Conf. info. (Date):	2010.08.29-2010.09.02
Note for article:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Similar Items:

1 Conference Proceedings Characterization of Aluminum and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique Wolborski, M., Bakowski, M., Pore, V., Ritala, M., Leskela, M., Schoner, A., Hallen, A. Trans Tech Publications	7 Conference Proceedings Atomic Layer Deposited Protective Layers M. Leskela, E. Salmi, M. Ritala Trans Tech Publications
2 Conference Proceedings Dielectric Oxide Nanolaminates Deposited by Atomic Layer Epitaxy Kukli, K., Ritala, M., Leskela, M. Electrochemical Society	8 Conference Proceedings On the Interface Quality of MIS Structures Fabricated From Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films Duenas, S., Castan, H., Garcia, H., Barbolla, J., Kukli, K., Ritala, M., Leskela, M. Materials Research Society
3 Conference Proceedings High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	9 Conference Proceedings Charge Trapping Memories With Atomic Layer Deposited High-k Dielectrics Capping Layers N. Nikolaou, P. Dimitrakis, P. Normand, K. Giannakopoulos, K. Mergia, V. Ioannou-Sougleridis, K. Kukli, Jaakko … Materials Research Society
4 Conference Proceedings Effect of Nuclear Scattering Damage at SiO₂/SiC and Al₂O₃/SiC Interfaces - a Radiation Hardness Study of Dielectrics M. Usman, A. Hallén, K. Gulbinas, V. Grivickas Trans Tech Publications	10 Conference Proceedings Atomic Layer Deposition of Thin Films for Microelectronics Ritala, M., Leskela, M. Electrochemical Society
5 Conference Proceedings Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001) J.H. Moon, K.Y. Cheong, D.I. Eom, H.K. Song, J.H. Yim, J.H. Lee, H.J. Na, W. Bahng, N.K. Kim, H.J. Kim Trans Tech Publications	11 Conference Proceedings In-line Electrical Metrology for High-K Gate Dielectrics Deposited by Atomic Layer Chemical Vapor Deposition De Witte, H., Passefort, S., Besling, W., Maes, J.W.H., Eason, K., Youngand, E., Heyns, M. Electrochemical Society
6 Conference Proceedings Atomic Layer Deposited Protective Layers M. Leskela, E. Salmi, M. Ritala Trans Tech Publications	12 Conference Proceedings INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION Tsai, W., Chen, I., Carter, R., Cartier, E., Kluth, J., Richard, O., Claes, M., Lin, Y.M., Nohira, H., Conard, T., … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12