Improved MOS Interface Properties of C-Face 4H-SiC by POCl<sub>3</sub> Annealing

Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing

Author(s):

Publication title:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Title of ser.:

Materials science forum

Ser. no.:

679-680

Pub. Year:

2011

Page(from):

425

Page(to):

428

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054177
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
Conf. info. (Number):	8th
Conf. info. (Venue):	Oslo, Norway
Conf. info. (Date):	2010.08.29-2010.09.02
Note for article:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

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Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing

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Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing