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Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current Degradation

Author(s):
Publication title:
Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd
Title of ser.:
Materials science forum
Ser. no.:
679-680
Pub. Year:
2011
Page(from):
382
Page(to):
385
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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