Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy

Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy

Author(s):

Publication title:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Title of ser.:

Materials science forum

Ser. no.:

679-680

Pub. Year:

2011

Page(from):

257

Page(to):

260

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054177
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
Conf. info. (Number):	8th
Conf. info. (Venue):	Oslo, Norway
Conf. info. (Date):	2010.08.29-2010.09.02
Note for article:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Similar Items:

1 Conference Proceedings Iron-Related Defect Centers in 3C-SiC T. Tsirimpis, S. Beljakova, B. Zippelius, H.B. Weber, G. Pensl Trans Tech Publications	7 Conference Proceedings Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy M. Hauck, J. Weisse, J. Lehmeyer, G. Pobegen, H.B. Weber, M. Krieger Trans Tech Publications
2 Conference Proceedings Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC J. Weber, S. Beljakowa, H.B. Weber, G. Pensl, B. Zippelius Trans Tech Publications	8 Conference Proceedings Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons S.A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno Trans Tech Publications
3 Conference Proceedings Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs Y. Nanen, B. Zippelius, S. Beljakowa, L. Trapaidze, M. Krieger Trans Tech Publications	9 Conference Proceedings Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, B. Kallinger Trans Tech Publications
4 Conference Proceedings On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC J. Weber, H.B. Weber, M. Krieger Trans Tech Publications	10 Conference Proceedings Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy Reshanov, S.A., Schneider, K., Helbig, R., Pensl, G., Nagasawa, H., Schoner, A. Trans Tech Publications
5 Conference Proceedings Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ? B. Zippelius, A. Glas, H.B. Weber, G. Pensl, T. Kimoto Trans Tech Publications	11 Conference Proceedings Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy S. Beljakowa, M. Krieger, T. Frank, G. Pensl, L. Trapaidze Trans Tech Publications
6 Conference Proceedings Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length B. Zippelius, M. Hauck, S. Beljakowa, H.B. Weber, M. Krieger Trans Tech Publications	12 Conference Proceedings Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers S. Beljakowa, S.A. Reshanov, B. Zippelius, M. Krieger, G. Pensl Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12