Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics

Author(s):: J.W. Steeds
Publication title:: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd
Title of ser.:: Materials science forum
Ser. no.:: 679-680
Pub. Year:: 2011
Page(from):: 173
Page(to):: 176
Pages:: 4
Pub. info.:: Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:: 02555476
Language:: English
Call no.:: M23650
Type:: Conference Proceedings

Details

TDL ID:	ZA00054177
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
Conf. info. (Number):	8th
Conf. info. (Venue):	Oslo, Norway
Conf. info. (Date):	2010.08.29-2010.09.02
Note for article:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Similar Items:

1 Conference Proceedings The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC J.W. Steeds Trans Tech Publications	7 Conference Proceedings Investigation of the Displacement Threshold of Si in 4H SiC Sullivan, W., Steeds, J.W. Trans Tech Publications
2 Conference Proceedings A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC W. Sullivan, J.W. Steeds Trans Tech Publications	8 Conference Proceedings Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies Y.S. Jang, S.A. Sakwe, P.J. Wellmann, S. Juillaguet, H. Peyre, J. Camassel, J.W. Steeds Trans Tech Publications
3 Conference Proceedings Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing J.W. Steeds Trans Tech Publications	9 Conference Proceedings Electron Irradiation of 4H SiC by TEM: An Optical Study Sridhara, S.G., Persson, P.O.Å., Carlsson, F.H.C., Bergman, J.P., Janzen, E., Evans, G., Steeds, J.W. Materials Research Society
4 Conference Proceedings Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC J.W. Steeds Trans Tech Publications	10 Conference Proceedings A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC Sullivan, W., Steeds, J.W., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications
5 Conference Proceedings The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation J.W. Steeds Trans Tech Publications	11 Conference Proceedings Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature … Steeds, J.W., Carosella, F., Evans, A.G., Ismail, M.M., Danks, L. R., Voegeli, W. Trans Tech Publications
6 Conference Proceedings Low Temperature Annealing of Optical Centres in 4H SiC Steeds, J.W., Furkert, S., Hayes, J.M., Sullivan, W. Trans Tech Publications	12 Conference Proceedings Origin of the Up-Conversion Process in 4H SiC Steeds, J.W., Furkert, S.A., Sullivan, W., Wagner, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12