Blank Cover Image

Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD

Author(s):
Publication title:
Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd
Title of ser.:
Materials science forum
Ser. no.:
679-680
Pub. Year:
2011
Page(from):
153
Page(to):
156
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

N. Jegenyes, J. Lorenzzi, V. Soulière, J. Dazord, F. Cauwet

Trans Tech Publications
7 Conference Proceedings Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase

O. Kim-Hak, J. Lorenzzi, N. Jegenyes, G. Ferro, D. Carole

Trans Tech Publications
2 Conference Proceedings On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates

G. Ferro, O. Kim-Hak, J. Lorenzzi, N. Jegenyes, M. Marinova

Trans Tech Publications
8 Conference Proceedings Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas

J. Lorenzzi, N. Jegenyes, M. Lazar, D. Tournier, F. Cauwet

Trans Tech Publications
3 Conference Proceedings Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

J. Lorenzzi, G. Zoulis, O. Kim-Hak, N. Jegenyes, D. Carole

Trans Tech Publications
9 Conference Proceedings Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate

J. Lorenzzi, N. Jegenyes, M. Lazar, D. Tournier, D. Carole

Trans Tech Publications
4 Conference Proceedings Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

M. Beshkova, J. Lorenzzi, N. Jegenyes, J. Birch, M. Syväjärvi

Trans Tech Publications
10 Conference Proceedings Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

Sartel, C., Bluet, J.M., Souliere, V., El-Harrouni, I., Monteil, Y., Mermoux, M., Guillot, G.

Trans Tech Publications
5 Conference Proceedings LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates

J.W. Sun, G. Zoulis, J. Lorenzzi, N. Jegenyes, S. Juillaguet

Trans Tech Publications
11 Conference Proceedings 3C-SiC MOS Based Devices: From Material Growth to Device Characterization

J. Lorenzzi, R. Esteve, N. Jegenyes, S.A. Reshanov, A. Schöner

Trans Tech Publications
6 Conference Proceedings Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques

G. Manolis, G. Zoulis, S. Juillaguet, J. Lorenzzi, G. Ferro

Trans Tech Publications
12 Conference Proceedings Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS

N. Habka, V. Souliere, J.M. Bluet, M. Soueidan, G. Ferro, Y. Monteil

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12