First Principles Investigation of Geometrical and Electronic Structure of Semiconductor Fe1-XCoxSi2

First Principles Investigation of Geometrical and Electronic Structure of Semiconductor Fe_1-XCo_xSi₂

Author(s):

Publication title:

Optoelectronic materials : Selected, peer reviewed papers from the 2010 International Conference on Optical, Electronic and Electrical Materials, August 1-4, Kunming, China, OEEM 2010

Title of ser.:

Materials science forum

Ser. no.:

663-665

Pub. Year:

2010

Pt.:

1

Page(from):

592

Page(to):

595

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054167
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Optical, Electronic and Electrical Materials
Conf. info. (Number):	2010
Conf. info. (Venue):	Kunming, China
Conf. info. (Date):	2010.08.01-2010.08.04
Note for article:	2010 International Conference on Optical, Electronic and Electrical Materials, August 1-4, Kunming, China

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