10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Author(s):

Publication title:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Title of ser.:

Materials science forum

Ser. no.:

645-648

Pub. Year:

2010

Pt.:

2

Page(from):

1025

Page(to):

1028

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054155
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2009
Conf. info. (Venue):	Nurnberg, Germany
Conf. info. (Date):	2009.10.11-2009.10.16
Note for article:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Similar Items:

1 Conference Proceedings Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes Q.C. Zhang, A. Agarwal, A.A. Burk, M.J. O'Loughlin, J. Palmour Trans Tech Publications	7 Conference Proceedings Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes R.E. Stahlbush, Q.C.J. Zhang, A.K. Agarwal, N.A. Mahadik Trans Tech Publications
2 Conference Proceedings 9 kV, 1 cm² SiC Gate Turn-Off Thyristors A.K. Agarwal, Q.C.J. Zhang, R. Callanan, C. Capell, A.A. Burk Trans Tech Publications	8 Conference Proceedings High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Krishnaswami, S., Agarwal, A.K., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, … Trans Tech Publications
3 Conference Proceedings High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs L. Cheng, S.H. Ryu, A.K. Agarwal, M.J. O'Loughlin, A.A. Burk Trans Tech Publications	9 Conference Proceedings Critical Technical Issues in High Voltage SiC Power Devices A.K. Agarwal, A.A. Burk, R. Callanan, C. Capell, M.K. Das Trans Tech Publications
4 Conference Proceedings A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed Q.C.J. Zhang, J. Richmond, C. Capell, A.K. Agarwal, J.W. Palmour Trans Tech Publications	10 Conference Proceedings Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers B.A. Hull, J.J. Sumakeris, M.J. O'Loughlin, Q.J. Zhang, J. Richmond Trans Tech Publications
5 Conference Proceedings 12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination Q.J. Zhang, A.K. Agarwal, C. Capell, L. Cheng, M.J. O'Loughlin Trans Tech Publications	11 Conference Proceedings Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk Trans Tech Publications
6 Conference Proceedings 4H-SiC Bipolar Junction Transistors with a Current Gain of 108 Q.J. Zhang, C. Jonas, A.A. Burk, C. Capell, J. Young Trans Tech Publications	12 Conference Proceedings SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices A.A. Burk, M.J. O'Loughlin, J.J. Sumakeris, C. Hallin, E. Berkman Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12