Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate
- Author(s):
- Publication title:
- Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
- Title of ser.:
- Materials science forum
- Ser. no.:
- 645-648
- Pub. Year:
- 2010
- Pt.:
- 2
- Page(from):
- 917
- Page(to):
- 920
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |
Materials Research Society |
Trans Tech Publications |
11
Conference Proceedings
Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |