Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations

Analyses of High Leakage Currents in Al⁺ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations

Author(s):

Publication title:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Title of ser.:

Materials science forum

Ser. no.:

645-648

Pub. Year:

2010

Pt.:

2

Page(from):

913

Page(to):

916

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054155
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2009
Conf. info. (Venue):	Nurnberg, Germany
Conf. info. (Date):	2009.10.11-2009.10.16
Note for article:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Similar Items:

1 Conference Proceedings Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography R. Tanuma, T. Tamori, Y. Yonezawa, H. Yamaguchi, H. Matsuhata Trans Tech Publications	7 Conference Proceedings Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography R. Tanuma, D. Mori, I. Kamata, H. Tsuchida Trans Tech Publications
2 Conference Proceedings Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes F. Hirokazu, T. Katsuno, T. Ishikawa, H. Naruoka, M. Konishi Trans Tech Publications	8 Conference Proceedings Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes R. Nipoti, M. Puzzanghera, G. Sozzi Trans Tech Publications
3 Conference Proceedings Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement Izumi, S., Fujisawa, H., Tawara, T., Ueno, K., Hiraoka, M. Trans Tech Publications	9 Conference Proceedings Characterization of Threading Screw Dislocations of Burgers Vectors with A-Components in 4H-SiC S. Onda, T. Okamoto, H. Uehigashi, H. Kondo, H. Saka Trans Tech Publications
4 Conference Proceedings Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	10 Conference Proceedings Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications
5 Conference Proceedings Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	11 Conference Proceedings Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress Y. Iwahashi, M. Miyazato, M. Miyajima, Y. Yonezawa, T. Kato, H. Fujiwara, K. Hamada, A. Otsuki, H. Okumura Trans Tech Publications
6 Conference Proceedings X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC R. Tanuma, D. Mori, I. Kamata, H. Tsuchida Trans Tech Publications	12 Conference Proceedings Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature T. Tsuji, A. Kinoshita, N. Iwamuro, K. Fukuda, K. Tezuka Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12