Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Author(s):

Publication title:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Title of ser.:

Materials science forum

Ser. no.:

645-648

Pub. Year:

2010

Pt.:

2

Page(from):

805

Page(to):

808

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054155
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2009
Conf. info. (Venue):	Nurnberg, Germany
Conf. info. (Date):	2009.10.11-2009.10.16
Note for article:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Similar Items:

1 Conference Proceedings Channel Hot-Carrier Effect of 4H-SiC MOSFET L.C. Yu, K.P. Cheung, J.S. Suehle, J.P. Campbell, K. Sheng Trans Tech Publications	7 Conference Proceedings Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability J.A. Fronheiser, A. Chatterjee, U. Grossner, K. Matocha, V. Tilak Trans Tech Publications
2 Conference Proceedings Wafer-Level Hall Measurement on SiC MOSFET L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha Trans Tech Publications	8 Conference Proceedings Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs V. Tilak, K. Matocha, G. Dunne Trans Tech Publications
3 Conference Proceedings 950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability K. Matocha, Z. Stum, S. Arthur, G. Dunne, L. Stevanovic Trans Tech Publications	9 Conference Proceedings Performance and Reliability of SiC MOSFETs for High-Current Power Modules K. Matocha, P.A. Losee, A. Gowda, E. Delgado, G. Dunne Trans Tech Publications
4 Conference Proceedings Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs L.C. Yu, J. Fronheiser, V. Tilak, K.P. Cheung Trans Tech Publications	10 Conference Proceedings The Challenge of Measuring Defects in Nanoscale Dielectrics K. Cheung, J.S. Suehle Electrochemical Society
5 Conference Proceedings Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers S.I. Soloviev, K. Matocha, G. Dunne, Z. Stum Trans Tech Publications	11 Conference Proceedings 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society
6 Conference Proceedings 4H-SiC Oxide Characterization with SIMS Using a 13C Tracer J.A. Fronheiser, K. Matocha, V. Tilak, L.C. Feldman Trans Tech Publications	12 Conference Proceedings Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N₂O and POCl₃ P. Fiorenza, M. Vivona, L.K. Swanson, F. Giannazzo, C. Bongiorno Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12