Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
- Author(s):
- Publication title:
- Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
- Title of ser.:
- Materials science forum
- Ser. no.:
- 645-648
- Pub. Year:
- 2010
- Pt.:
- 2
- Page(from):
- 737
- Page(to):
- 740
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
3
Conference Proceedings
Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications
Trans Tech Publications |
10
Conference Proceedings
Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN
MRS - Materials Research Society |
MRS - Materials Research Society |
11
Conference Proceedings
Thermal Behavior of Ni Ohmic Contacts to n-SiC: A Materials and Electrical Reliability Investigation
Electrochemical Society |
6
Conference Proceedings
AgTe/ZrB2/Au multilayer metallization for improved ohmic contacts to n-GaSb
SPIE-The International Society for Optical Engineering |
Materials Research Society |