Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
- Author(s):
- Publication title:
- Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
- Title of ser.:
- Materials science forum
- Ser. no.:
- 645-648
- Pub. Year:
- 2010
- Pt.:
- 2
- Page(from):
- 709
- Page(to):
- 712
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
MRS - Materials Research Society |
MRS - Materials Research Society |
American Chemical Society |
Trans Tech Publications |
9
Conference Proceedings
A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient
Materials Research Society |
4
Conference Proceedings
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
Trans Tech Publications |
10
Conference Proceedings
Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃
Trans Tech Publications |
12
Conference Proceedings
Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence
Trans Tech Publications |