Blank Cover Image

Electrical Properties and Gas Sensing Characteristics of the Al2O3/4H SiC Interface Studied by Impedance Spectroscopy

Author(s):
Publication title:
Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
Title of ser.:
Materials science forum
Ser. no.:
645-648
Pub. Year:
2010
Pt.:
1
Page(from):
531
Page(to):
534
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Characterization of the SiO2/SiC Interface with Impedance Spectroscopy

P.A. Sobas, U. Grossner, B.G. Svensson

Trans Tech Publications
7 Conference Proceedings Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low Temperatures

L.D. Filip, I. Pintilie, B.G. Svensson

Trans Tech Publications
2 Conference Proceedings The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique

M. Avice, U. Grossner, O. Nilsen, H. Fjellvag, B.G. Svensson

Trans Tech Publications
8 Conference Proceedings Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique

L.S. Lovlie, I. Pintilie, S. Kumar C-P., U. Grossner, B.G. Svensson

Trans Tech Publications
3 Conference Proceedings X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

U. Grossner, M. Servidori, M. Avice, O. Nilsen, H. Fjellvag, R. Nipoti, B.G. Svensson

Trans Tech Publications
9 Conference Proceedings Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy

N. Iwamoto, A. Azarov, T. Ohshima, A.M.M. Moe, B.G. Svensson

Trans Tech Publications
4 Conference Proceedings High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

Avice, M., Grossner, U., Nilsen, O., Christensen, J.S., Fjellvag, H., Svensson, B.G.

Trans Tech Publications
10 Conference Proceedings Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy

Leveque, P., Martin, D., Svensson, B.G., Hallen, A.

Trans Tech Publications
5 Conference Proceedings Electrical Properties of Aluminum Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC

Avice, M., Grossner, U., Monakhov, E. V., Grillenberger, J., Nilsen, O., Fjellvag, H., Svensson, B. G.

Trans Tech Publications
11 Conference Proceedings Electrically Active Defects in n-Type 4H- and 6H-SiC

Doyle,J.P., Aboelfotoh,M.O., Svensson,B.G.

Trans Tech Publications
6 Conference Proceedings XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO2/Ce2Si2O7/4H-SiC Interface Structure upon Oxidation

M. Kildemo, U. Grossner, B.G. Svensson, S. Raaen

Trans Tech Publications
12 Conference Proceedings ELECTRICAL PROPERTIES OF COPPER SILICIDE/SILICON INTERFACES

Svensson, B. G.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12