Blank Cover Image

Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface

Author(s):
Publication title:
Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
Title of ser.:
Materials science forum
Ser. no.:
645-648
Pub. Year:
2010
Pt.:
1
Page(from):
479
Page(to):
482
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface

K. Matocha, V. Tilak

Trans Tech Publications
7 Conference Proceedings Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface

J.H. Moon, K.Y. Cheong, H.K. Song, J.H. Yim, M.S. Oh

Trans Tech Publications
2 Conference Proceedings Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability

J.A. Fronheiser, A. Chatterjee, U. Grossner, K. Matocha, V. Tilak

Trans Tech Publications
8 Conference Proceedings Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces

Cheong, K.-Y., Dimitrijev, S., Han, J.

Trans Tech Publications
3 Conference Proceedings 4H-SiC Oxide Characterization with SIMS Using a 13C Tracer

J.A. Fronheiser, K. Matocha, V. Tilak, L.C. Feldman

Trans Tech Publications
9 Conference Proceedings Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs

R.R. Rao, K. Matocha, V. Tilak

Trans Tech Publications
4 Conference Proceedings An Approach to Model Temperature Effects of Interface Traps in 4H-SiC

R. Rao, S. Balaji, K. Matocha, V. Tilak

Trans Tech Publications
10 Conference Proceedings Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers

V. Tilak, K. Matocha, G. Dunne

Trans Tech Publications
5 Conference Proceedings Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs

A. Chatterjee, A. Bhat, K. Matocha

Trans Tech Publications
11 Conference Proceedings Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs

V. Tilak, K. Matocha, G. Dunne

Trans Tech Publications
6 Conference Proceedings Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide

A. Chatterjee, K. Matocha

Trans Tech Publications
12 Conference Proceedings Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices

S. Katakami, M. Arai, K. Takenaka, Y. Yonezawa, H. Ishimori

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12