Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers

Author(s):

Publication title:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Title of ser.:

Materials science forum

Ser. no.:

645-648

Pub. Year:

2010

Pt.:

1

Page(from):

427

Page(to):

430

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054155
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2009
Conf. info. (Venue):	Nurnberg, Germany
Conf. info. (Date):	2009.10.11-2009.10.16
Note for article:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Similar Items:

1 Conference Proceedings Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons S.A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno Trans Tech Publications	7 Conference Proceedings Electrical Activation of B⁺-Ions Implanted into 4H-SiC T. Tsirimpis, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications
2 Conference Proceedings Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons M. Weidner, L. Trapaidze, G. Pensl, S.A. Reshanov, A. Schöner Trans Tech Publications	8 Conference Proceedings Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers Reshanov, S.A., Klettke, O., Pensl, G., Choyke, W.J. Trans Tech Publications
3 Conference Proceedings High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al- Coimplanted Surface Layer S.A. Reshanov, S. Beljakowa, T. Frank, B. Zippelius, M. Krieger Trans Tech Publications	9 Conference Proceedings Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, B. Kallinger Trans Tech Publications
4 Conference Proceedings Lifetime Investigations of 4H-SiC PiN Power Diodes S.A. Reshanov, W. Bartsch, B. Zippelius, G. Pensl Trans Tech Publications	10 Conference Proceedings Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs Y. Nanen, B. Zippelius, S. Beljakowa, L. Trapaidze, M. Krieger Trans Tech Publications
5 Conference Proceedings Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications	11 Conference Proceedings Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface M. Krieger, S. Beljakowa, B. Zippelius, V.V. Afanas'ev, A.J. Bauer Trans Tech Publications
6 Conference Proceedings Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy Reshanov, S.A., Klettke, O., Pensl, G. Trans Tech Publications	12 Conference Proceedings Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12