Comparison for Thermoelectric Properties of BiTe Based Semiconductor Processed by the Mechanical Alloying and the High Pressure Torsion after Melt Grown by the Vertical Bridgman Method

Comparison for Thermoelectric Properties of BiTe Based Semiconductor Processed by the Mechanical Alloying and the High Pressure Torsion after Melt Grown by the Vertical Bridgman Method

Author(s):

Publication title:

THERMEC 2009, 6th International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS, Berlin, Germany, August 25-29, 2009

Title of ser.:

Materials science forum

Ser. no.:

638-642

Pub. Year:

2010

Pt.:

2

Page(from):

1923

Page(to):

1928

Pages:

6

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054152
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Processing & Manufacturing of Advanced Materials
Conf. info. (Number):	6th
Conf. info. (Venue):	Berlin, Germany
Conf. info. (Date):	2009.08.25-2009.08.29
Note for article:	6th International Conference on Processing & Manufacturing of Advanced Materials, Berlin, Germany, August 25-29, 2009

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